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FDS5690

Fairchild Semiconductor
Part Number FDS5690
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS5690 March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced usi...
Datasheet PDF File FDS5690 PDF File

FDS5690
FDS5690

Overview
FDS5690 March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • 7 A, 60 V.
RDS(on) = 0.
028 Ω @ VGS = 10 V RDS(on) = 0.
033 Ω @ VGS = 6 V.
• • • • Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications • • DC/DC converter Motor drives D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 60 (Note 1a) Units V V A W ±20 7 50 2.
5 1.
2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS5690 Device FDS5690 Reel Size 13’’ Tape Width 12mm Quantity 2500 units  2000 Fairchild Semiconductor Corporation FDS5690 Rev.
C FDS5690 DMOS Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Min 60 Typ Max Units V Off Characteristics...


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