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FDS5690

Part Number FDS5690
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-st...
Features
• 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.



• Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications

• DC/DC converter Motor drives D D D ...

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FDS5690 : Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where fast switching are required. low in-line power loss and • High performance trench technology for extremely low RDS(ON). Applications • High power and current handling capability. • DC/DC converter • Motor drives D D D D 5 4 6 3 SO-8 G SS S 7.

FDS5692Z : Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A „ Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A „ ESD protection diode (note 3) Applications „ Low Qgd „ DC/DC converter „ Fast switching speed D D D D SO-8 G SS S 5 6 7 8 MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID Drain-Source Voltage Parameter Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed EAS Single Pulse Avala.




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