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FDS6990A

Fairchild Semiconductor
Part Number FDS6990A
Manufacturer Fairchild Semiconductor
Description Dual N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS6990A June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench® MOSFET General Description These N-Channel Logic ...
Datasheet PDF File FDS6990A PDF File

FDS6990A
FDS6990A

Overview
FDS6990A June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • 7.
5 A, 30 V.
RDS(ON) = 18 mΩ @ VGS = 10 V RDS(ON) = 23 mΩ @ VGS = 4.
5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 6 Q1 7 Q2 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6990A FDS6990A 13’’ Ratings 30 ± 20 7.
5 20 1.
6 1.
0 0.
9 –55 to +150 78 40 Tape width 12mm Units V V A W °C °C/W °C/W Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6990A Rev D(W) FDS6990A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Source Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C VGS = ±20 V, VDS = 0 V 30 V 26 mV/°C 1 10 ±100 µA nA On Characteristics (Note 2)...


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