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FDS7066SN3

Fairchild Semiconductor
Part Number FDS7066SN3
Manufacturer Fairchild Semiconductor
Description 30V N-Channel PowerTrench SyncFET
Published Mar 30, 2005
Detailed Description FDS7066SN3 January 2004 FDS7066SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7066SN3 is designed ...
Datasheet PDF File FDS7066SN3 PDF File

FDS7066SN3
FDS7066SN3

Overview
FDS7066SN3 January 2004 FDS7066SN3 30V N-Channel PowerTrench SyncFET™ General Description The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDS7066SN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The performance of the FDS7066SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode.
Features • 19 A, 30 V RDS(ON) = 5.
5 mΩ @ VGS = 10 V RDS(ON) = 6.
0 mΩ @ VGS = 4.
5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications • DC/DC converter • Motor drivesFeatures 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units V V A W °C 19 60 3.
0 1.
7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.
5 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7066SN3 Device FDS7066SN3 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS7066SN3 Rev C2 (W) FDS7066SN3 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS ...


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