DatasheetsPDF.com

FDZ204P

Fairchild Semiconductor
Part Number FDZ204P
Manufacturer Fairchild Semiconductor
Description P-Channel 2.5V Specified PowerTrench
Published Mar 30, 2005
Detailed Description FDZ204P March 2003 FDZ204P P-Channel 2.5V Specified PowerTrench   BGA MOSFET Features • –4.5 A, –20 V. RDS(ON) = 45 m...
Datasheet PDF File FDZ204P PDF File

FDZ204P
FDZ204P

Overview
FDZ204P March 2003 FDZ204P P-Channel 2.
5V Specified PowerTrench   BGA MOSFET Features • –4.
5 A, –20 V.
RDS(ON) = 45 mΩ @ VGS = –4.
5 V RDS(ON) = 75 mΩ @ VGS = –2.
5 V • Occupies only 4 mm2 of PCB area.
Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.
80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure-of-merit.
• High power and current handling capability.
General Description Combining Fairchild’s advanced 2.
5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS(ON).
This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Applications • Battery management • Load switch • Battery protection D D S S D P in 1 S F204P S G S S G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter –20 ±12 –4.
5 –20 1.
8 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 67 11 1 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking 204P Device FDZ204P Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2003 Fairchild Semiconductor Corporation FDZ204P Rev.
D2 (W) FDZ204P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss TA = 25° C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)