DatasheetsPDF.com

F1516

Part Number	F1516
Manufacturer	Polyfet RF Devices
Description	RF POWER VDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet	F1516 PDF File

Overview

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F1516 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 16 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance 4.
2 o C/W Maximum Junction Temper...

Similar Datasheet

F1500NC250 Extra Fast Recovery Diode - IXYS
F1510 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1516 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1520 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1533A Surface Mount Voltage Controlled Crystal Oscillators - Champion
F1535 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F1535A Surface Mount Voltage Controlled Crystal Oscillators - Champion
F159V Dual-Path RF Transmitter - Renesas
F15F60C3M Power MOSFET - SHINDENGEN
F15N05L N-Channel MOSFET - General Electric Solid State

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)