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F3002

Part Number	F3002
Manufacturer	Polyfet RF Devices
Description	RF POWER VDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet	F3002 PDF File

Overview

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high F t enhance broadband performance TM F3002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 500 Watts Junction to Case Thermal Resistance 0.
35 o C/W Maximum Junction Temperat...

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