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FA01220A

Part Number	FA01220A
Manufacturer	Mitsubishi Electric Semiconductor
Description	GaAs FET HYBRID IC
Published	Mar 30, 2005
Detailed Description	MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz...
Datasheet	FA01220A PDF File

Overview

MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.
5GHz band small size handheld radio.
1 GND 8 7 6 Unit:mm FEATURES • Low voltage • High gain • High efficiency • High power 3.
5V 20.
5B 50% 30.
5dBm 2 3 4 5 GND 10.
0 APPLICATION PDC1.
5GHz 0.
8 2.
0 6.
0 1 RF INPUT 2 VD1 3 GND 4 VD2 5 RF OUTPUT 6 GND 7 GND 8 VG1,2 tolerance:±0.
2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operating case temp Storage temp Condition Tc=25˚C, Po≤30.
5dBm Tc=25˚C, ZG=ZL=50Ω Ratings 4.
5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation.
T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25˚C) Symbol f Pin IDt ρin ACP50 ACP100 2fo 3fo Parameter Frequency Input power Total drain current Return loss ±50kHz adjacent channel power ±100kHz adjacent channel power 2nd harmonics 3rd harmonics Test conditions Min 1429 – – – – – – – Limits Typ – (7) 6...

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FA01220A GaAs FET HYBRID IC - Mitsubishi Electric Semiconductor

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