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ESDA6V1S3RL

STMicroelectronics
Part Number ESDA6V1S3RL
Manufacturer STMicroelectronics
Description TRANSIL ARRAY FOR ESD PROTECTION
Published Mar 30, 2005
Detailed Description ® ESDA6V1S3 ESDA6V2S6 TRANSIL™ ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D.™ APPLICATIONS Where tran...
Datasheet PDF File ESDA6V1S3RL PDF File

ESDA6V1S3RL
ESDA6V1S3RL

Overview
® ESDA6V1S3 ESDA6V2S6 TRANSIL™ ARRAY FOR ESD PROTECTION Application Specific Discretes A.
S.
D.
™ APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : - COMPUTERS - PRINTERS - COMMUNICATION SYSTEMS - GSM HANDSETS AND ACCESSORIES - OTHER TELEPHONE SETS FEATURES 18 UNIDIRECTIONAL TRANSIL™ FUNCTIONS LOW LEAKAGE CURRENT: IR max.
< 2 µA 200 W PEAK PULSE POWER (8/20 µs) SO20 ESDA6V1S3 SSOP20 ESDA6V2S6 DESCRITION The ESDA6xxSx is a monolithic voltage suppressor designed to protect componentswhich are connected to data and transmission lines against ESD.
It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients.
FUNCTIONAL DIAGRAM BENEFITS High ESD protection level : up to 25 kV High integration Suitable for high density boards COMPLIESWITH THE FOLLOWING STANDARDS : IEC 1000-4-2 : level 4 MIL STD 883C-Method 3015-6 : class3 (human body model) October 1998 Ed: 2A 1/7 ESDA6V1S3 / ESDA6V2S6 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol VPP PPP Tstg Tj TL Parameter Electrostatic discharge MIL STD 883C - Method 3015-6 Peak pulse power (8/20µs) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s Value 25 200 - 55 to + 150 150 260 Unit kV W °C °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance Forward voltage drop αT C Rd VF Types VBR min.
note1 V @ max.
IR IRM max.
note1 @ VRM Rd typ.
note 2 αT max.
note 3 10 /°C -4 C typ.
0V bias pF 120 100 VF @ max.
IF V 7.
2 7.
2 mA 1 1 µA 2 2 V 5.
25 5.
25 Ω 0.
5 0.
5 V 1.
25 1.
25 mA 200 200 ESDA6V1S3 ESDA6V2S6 6.
1 6.
2 6 6 Note 1 : Between any I/O pin and Ground Note 2 : Square pulse, IPP = 25A for ESDA6V1S3 and I PP = 15A for ESDA6V2S6 , tp = 2.
5µs Note 3 : ...


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