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FMG1G50US60H

Fairchild Semiconductor
Part Number FMG1G50US60H
Manufacturer Fairchild Semiconductor
Description Molding Type Module
Published Apr 1, 2005
Detailed Description FMG1G50US60H IGBT FMG1G50US60H Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (I...
Datasheet PDF File FMG1G50US60H PDF File

FMG1G50US60H
FMG1G50US60H

Overview
FMG1G50US60H IGBT FMG1G50US60H Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness.
They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features • • • • • • UL Certified No.
E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.
2 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-GA E1/C2 Application • • • • • AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMG1G50US60H 600 ± 20 50 100 50 100 10 250 -40 to +150 -40 to +125 2500 2.
0 2.
0 Units V V A A A A us W °C °C V N.
m N.
m Notes : (1) Repetitive rating : Pulse width limited by max.
junction temperature ©2002 Fairchild Semiconductor Corporation FMG1G50US60H Rev.
A FMG1G50US60H Electrical Characteristics of IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min.
Typ.
Max.
Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff.
of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.
6 ----...


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