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FP1510SOT89

Part Number	FP1510SOT89
Manufacturer	Filtronic Compound Semiconductors
Description	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Published	Apr 1, 2005
Detailed Description	Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1...
Datasheet	FP1510SOT89 PDF File

Overview

Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.
8 GHz ♦ 19 dB Power Gain at 1.
8 GHz ♦ 1.
0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.
8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The FP1510 also features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIF...

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FP1510SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT - Filtronic Compound Semiconductors

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