DatasheetsPDF.com

FP201L100

Siemens Semiconductor Group
Part Number FP201L100
Manufacturer Siemens Semiconductor Group
Description Differential Magnetoresistive Sensor
Published Apr 1, 2005
Detailed Description Differential Magnetoresistive Sensor FP 201 L 100 Features • Extremely high output voltage • 2 independently biased ma...
Datasheet PDF File FP201L100 PDF File

FP201L100
FP201L100

Overview
Differential Magnetoresistive Sensor FP 201 L 100 Features • Extremely high output voltage • 2 independently biased magnetic circuits • Robust housing • Signal amplitude independent of operating speed • Screw mounting possible Typical applications • Detection of speed • Detection of position • Detection of sense of rotation Dimensions in mm Type FP 201 L 100 Ordering Code Q65210-L101 The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state each have a basic resistance of about 125 Ω.
They are series coupled as a voltage divider and are encapsuled in plastic as protection against mechanical stresses.
This magnetically actuated sensor can be implemented as a direction dependent contactless switch where it shows a voltage change of about 1.
3 V/mm in its linear region.
Semiconductor Group 1 07.
96 FP 201 L 100 Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and casing Thermal conductivity Symbol Value – 25 / + 100 – 25 / + 110 600 10 > 100 ≥ 10 ≥5 Unit °C °C mW V V mW/K mW/K TA Tstg Ptot VIN VI Gthcase GthA Characteristics (TA = 25 °C) Nominal supply voltage Total resistance, (δ = ∞, I ≤ 1 mA) Center symmetry3) (δ = ∞) Offset voltage4) (at VIN N and δ = ∞) Open circuit output voltage5) (VIN N and δ = 0.
5 mm) Cut-off frequency VIN N R1-3 M V0 Vout pp fc 5 700…1400 ≤ 10 ≤ 130 > 2.
2 >7 V Ω % mV V kHz This sensor is operated by a permanent magnet.
Using the arrangement as shown in Fig.
1, the permanent magnet increases the internal biasing field through the righthand side magneto resistor (connections 2-3), and reduces the field through the left side magneto resistor (connections 1-2).
As a result the resistance value of MR2-3 increases while that of MR1-2 decreases.
When the permanent magnet is moved from left to right the above-mentioned process operates in ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)