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FP301

Sanyo Semicon Device
Part Number FP301
Manufacturer Sanyo Semicon Device
Description DC-DC Converter Applications
Published Apr 1, 2005
Detailed Description Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter App...
Datasheet PDF File FP301 PDF File

FP301
FP301

Overview
Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with 2 devices (NPN transistor and Schottoky barrier diode) contained in one package, facilitating high-density mounting.
· The FP301 is formed with a chip being equivalent to the 2SD1621 and a chip being equivalent to the SB07-03C placed in one package.
Package Dimensions unit:mm 2099A [FP301] 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Mounted on ceramic board (250mm2×0.
8mm) 30 25 6 2 5 400 0.
8 150 V V V A A mA W ˚C Symbol Conditions Ratings Unit Electrical Connection 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base (Top view) Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOTO) BX-0215 No.
4539-1/4 FP301 Continued from preceding page.
Electrical Characteristics at Ta=25˚C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a I...


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