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FQA55N10

Fairchild Semiconductor
Part Number FQA55N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power fi...
Datasheet PDF File FQA55N10 PDF File

FQA55N10
FQA55N10

Overview
FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM Features • • • • • • • 61A, 100V, RDS(on) = 0.
026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA55N10 100 61 43.
1 244 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1100 61 19 6.
0 190 1.
27 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
24 -Max 0.
79 -40 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev.
A, July 2000 FQA55N10 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR ...


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