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FQA7N90M

Fairchild Semiconductor
Part Number FQA7N90M
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File FQA7N90M PDF File

FQA7N90M
FQA7N90M

Overview
FQA7N90M January 2002 QFET FQA7N90M 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
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TM Features • • • • • • 7A, 900V, RDS(on) = 1.
8Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● ...


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