DatasheetsPDF.com

FQAF19N60

Fairchild Semiconductor
Part Number FQAF19N60
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQAF19N60 April 2000 QFET FQAF19N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File FQAF19N60 PDF File

FQAF19N60
FQAF19N60

Overview
FQAF19N60 April 2000 QFET FQAF19N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 11.
2A, 600V, RDS(on) = 0.
38 Ω @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)