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FQB1P50

Fairchild Semiconductor
Part Number FQB1P50
Manufacturer Fairchild Semiconductor
Description 500V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB1P50 / FQI1P50 December 2000 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description These P-Channel enhan...
Datasheet PDF File FQB1P50 PDF File

FQB1P50
FQB1P50

Overview
FQB1P50 / FQI1P50 December 2000 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM Features • • • • • • -1.
5A, -500V, RDS(on) = 10.
5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous ...


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