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FQB2NA90

Fairchild Semiconductor
Part Number FQB2NA90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB2NA90 / FQI2NA90 September 2000 QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description These N-Channel ...
Datasheet PDF File FQB2NA90 PDF File

FQB2NA90
FQB2NA90

Overview
FQB2NA90 / FQI2NA90 September 2000 QFET FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 2.
8A, 900V, RDS(on) = 5.
8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.
5 pF) Fast switching 100% avalanche tested Improved dv/dt cap...


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