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FQB2P40

Fairchild Semiconductor
Part Number FQB2P40
Manufacturer Fairchild Semiconductor
Description 400V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB2P40 / FQI2P40 December 2000 QFET FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description These P-Channel enhan...
Datasheet PDF File FQB2P40 PDF File

FQB2P40
FQB2P40



Overview
FQB2P40 / FQI2P40 December 2000 QFET FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM Features • • • • • • -2.
0A, -400V, RDS(on) = 6.
5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB2P40 / FQI2P40 -400 -2.
0 -1.
27 -8.
0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 120 -2.
0 6.
3 -4.
5 3.
13 63 0.
51 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
98 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQB2P40 / FQI2P40 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise ...



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