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FQB4N20L

Fairchild Semiconductor
Part Number FQB4N20L
Manufacturer Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB4N20L / FQI4N20L December 2000 QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General Description These N-Cha...
Datasheet PDF File FQB4N20L PDF File

FQB4N20L
FQB4N20L

Overview
FQB4N20L / FQI4N20L December 2000 QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
TM Features • • • • • • • 3.
8A, 200V, RDS(on) = 1.
35Ω @VGS = 10 V Low gate charge ( typical 4.
0 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C un...


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