DatasheetsPDF.com

FQB60N03L

Fairchild Semiconductor
Part Number FQB60N03L
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level PWM Optimized Power MOSFET
Published Apr 1, 2005
Detailed Description FQB60N03L October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device empl...
Datasheet PDF File FQB60N03L PDF File

FQB60N03L
FQB60N03L


Overview
FQB60N03L October 2002 FQB60N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
010Ω (Typ), VGS = 10V • rDS(ON) = 0.
017Ω (Typ), VGS = 5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1650pF Applications • DC/DC converters DRAIN (FLANGE) D GATE SOURCE G TO-263AB MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.
5V) Continuous (TC = 25oC, VGS = 10V, Rθ JA = 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 51 27 7 S Ratings 30 ±16 Units V V A A A A W W/oC o Figure 4 62 0.
5 -55 to 150 C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 2 62 43 o o o C/W C/W C/W Package Marking and Ordering Information Device Marking FQB60N03L Device FQB60N03L Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units ©2002 Fairchild Semiconductor Corporation FQB60N03L Rev.
B FQB60N03L Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±16V TC= 150oC 30 1 250 ±100 V µA nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance V GS = VDS, ID = 250µA ID = 51A, VGS = 10V ID = 27A, VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)