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FQB6N80

Fairchild Semiconductor
Part Number FQB6N80
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description These N-Channel enha...
Datasheet PDF File FQB6N80 PDF File

FQB6N80
FQB6N80

Overview
FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 5.
8A, 800V, RDS(on) = 1.
95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -...


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