DatasheetsPDF.com

FQD5N20L

Fairchild Semiconductor
Part Number FQD5N20L
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD5N20L — N-Channel QFET® MOSFET FQD5N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.2 Ω November 2013 Description This ...
Datasheet PDF File FQD5N20L PDF File

FQD5N20L
FQD5N20L

Overview
FQD5N20L — N-Channel QFET® MOSFET FQD5N20L N-Channel QFET® MOSFET 200 V, 3.
8 A, 1.
2 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 3.
8 A, 200 V, RDS(on) = 1.
2 Ω (Max.
) @ VGS = 10 V, ID = 1.
9 A • Low Gate Charge (Typ.
4.
8 nC) • Low Crss (Typ.
6.
0 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQD5N20LTM 200 3.
8 2.
4 15.
2 ± 20 60 3.
8 3.
7 5.
5 2.
5 37 0.
29 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD5N20LTM 3.
4 110 50 Unit oC/W ©2010 Fairchild Semiconductor Corporation 1 FQD5N20L Rev.
C1 www.
fairchildsemi.
com FQD5N20L — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQD5N20LTM Top Mark FQD5N20L Package DPAK Packing Method Re...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)