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FQD5N50C

Fairchild Semiconductor
Part Number FQD5N50C
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel ...
Datasheet PDF File FQD5N50C PDF File

FQD5N50C
FQD5N50C

Overview
FQD5N50C / FQU5N50C FQD5N50C / FQU5N50C 500V N-Channel MOSFET October 2008 QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features • 4.
0A, 500V, RDS(on) = 1.
4 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G! ● ◀▲ ● ● ! S FQD5N50C / FQU5N50C 500 4 2.
4 16 ± 30 300 4 4.
8 4.
5 2.
5 48 0.
38 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * RθJA Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ Max Units - 2.
6 °C/W - 50 °C/W - 110 °C/W ©2008 Fairchild Semiconductor Internationa Rev.
A1, October 2008...


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