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FQI17P10

Fairchild Semiconductor
Part Number FQI17P10
Manufacturer Fairchild Semiconductor
Description 100V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB17P10 / FQI17P10 QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode...
Datasheet PDF File FQI17P10 PDF File

FQI17P10
FQI17P10

Overview
FQB17P10 / FQI17P10 QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM Features • • • • • • • -16.
5A, -100V, RDS(on) = 0.
19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Sour...


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