DatasheetsPDF.com

FQI2N80

Fairchild Semiconductor
Part Number FQI2N80
Manufacturer Fairchild Semiconductor
Description 800V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enha...
Datasheet PDF File FQI2N80 PDF File

FQI2N80
FQI2N80

Overview
FQB2N80 / FQI2N80 September 2000 QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 2.
4A, 800V, RDS(on) = 6.
3Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB2N80 / FQI2N80 800 2.
4 1.
52 9.
6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 180 2.
4 8.
5 4.
0 3.
13 85 0.
68 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
47 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A, September 2000 FQB2N80 / FQI2N80 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Ty...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)