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FQI4P40

Fairchild Semiconductor
Part Number FQI4P40
Manufacturer Fairchild Semiconductor
Description 400V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB4P40 / FQI4P40 August 2000 QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description These P-Channel enhance...
Datasheet PDF File FQI4P40 PDF File

FQI4P40
FQI4P40

Overview
FQB4P40 / FQI4P40 August 2000 QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast based on complimentary half bridge.
TM Features • • • • • • -3.
5A, -400V, RDS(on) = 3.
1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB4P40 / FQI4P40 -400 -3.
5 -2.
2 -14 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 260 -3.
5 8.
5 -4.
5 3.
13 85 0.
68 -55 to +150 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
47 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A, August 2000 FQB4P40 / FQI4P40 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditi...


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