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FQI6N40C

Fairchild Semiconductor
Part Number FQI6N40C
Manufacturer Fairchild Semiconductor
Description 400V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode pow...
Datasheet PDF File FQI6N40C PDF File

FQI6N40C
FQI6N40C

Overview
FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
TM Features • • • • • • 6A, 400V, RDS(on) = 1.
0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain ...


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