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FQI7N20L

Fairchild Semiconductor
Part Number FQI7N20L
Manufacturer Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB7N20L / FQI7N20L December 2000 QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description These N-Cha...
Datasheet PDF File FQI7N20L PDF File

FQI7N20L
FQI7N20L

Overview
FQB7N20L / FQI7N20L December 2000 QFET FQB7N20L / FQI7N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
TM Features • • • • • • • 6.
5A, 200V, RDS(on) = 0.
75Ω @VGS = 10 V Low gate charge ( typical 6.
8 nC) Low Crss ( typical 8.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB7N20L / FQI7N20L 200 6.
5 4.
11 26 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 73 6.
5 6.
3 5.
5 3.
13 63 0.
51 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.
98 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A2, Dece...


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