DatasheetsPDF.com

FQI90N08

Fairchild Semiconductor
Part Number FQI90N08
Manufacturer Fairchild Semiconductor
Description 80V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQB90N08 / FQI90N08 January 2001 QFET FQB90N08 / FQI90N08 80V N-Channel MOSFET General Description These N-Channel enh...
Datasheet PDF File FQI90N08 PDF File

FQI90N08
FQI90N08

Overview
FQB90N08 / FQI90N08 January 2001 QFET FQB90N08 / FQI90N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
D TM Features • • • • • • • 71A, 80V, RDS(on) = 0.
016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)