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FQP10N20L

Fairchild Semiconductor
Part Number FQP10N20L
Manufacturer Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP10N20L December 2000 QFET FQP10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mod...
Datasheet PDF File FQP10N20L PDF File

FQP10N20L
FQP10N20L

Overview
FQP10N20L December 2000 QFET FQP10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
TM Features • • • • • • • 10A, 200V, RDS(on) = 0.
36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP10N20L 200 10 6.
3 40 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 180 10 8.
7 5.
5 87 0.
7 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
5 -Max 1.
44 -62.
5 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQP10N20L Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆T...


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