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FQP17N08

Fairchild Semiconductor
Part Number FQP17N08
Manufacturer Fairchild Semiconductor
Description 80V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP17N08 January 2001 QFET FQP17N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power fi...
Datasheet PDF File FQP17N08 PDF File

FQP17N08
FQP17N08

Overview
FQP17N08 January 2001 QFET FQP17N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
TM Features • • • • • • • 16.
5A, 80V, RDS(on) = 0.
115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltag...


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