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FQP17P06

Fairchild Semiconductor
Part Number FQP17P06
Manufacturer Fairchild Semiconductor
Description 60V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP17P06 P-Channel QFET® MOSFET March 2013 FQP17P06 P-Channel QFET® MOSFET - 60 V, - 17 A, 120 m Description This P-...
Datasheet PDF File FQP17P06 PDF File

FQP17P06
FQP17P06

Overview
FQP17P06 P-Channel QFET® MOSFET March 2013 FQP17P06 P-Channel QFET® MOSFET - 60 V, - 17 A, 120 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features • - 17 A, - 60 V, RDS(on) = 120 m (Max.
) @ VGS = - 10 V, ID = - 8.
5 A • Low Gate Charge (Typ.
21 nC) • Low Crss (Typ.
80 pF) • 100% Avalanche Tested • 175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C...


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