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FQP2N90

Fairchild Semiconductor
Part Number FQP2N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP2N90 — N-Channel QFET® MOSFET FQP2N90 N-Channel QFET® MOSFET 900 V, 2.2 A, 7.2 Ω December 2013 Description This N-...
Datasheet PDF File FQP2N90 PDF File

FQP2N90
FQP2N90

Overview
FQP2N90 — N-Channel QFET® MOSFET FQP2N90 N-Channel QFET® MOSFET 900 V, 2.
2 A, 7.
2 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 2.
2 A, 900 V, RDS(on) = 7.
2 Ω (Max.
) @ VGS = 10 V, ID = 1.
1 A • Low Gate Charge (Typ.
12 nC) • Low Crss (Typ.
5.
5 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
 ) 4 4 ) ;  4 ; !5 8         )         0+%261   0+.
((61     8  :  )     8 &! ;  &!   *!&! ;  8 =* !!5 8  0+%261   "!%26       *  Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
               S   '(( %% .
7' 99 ±7( .
,( %% 92 >( 92 ( @9 22A.
2( 7(( Thermal Characteristics  +θ  +θ  Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP2N90 1.
47 -' &  ) & & & ) < & < )5  ? ?56 6 6  6? 6? ©2000 Fairchild Semiconductor Corporation 1 FQP2N90 Rev.
C1 www.
fairchildsemi.
com FQP2N90 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP2N90 Top Mark FQP2N90 Package TO-220 Packing Method Reel Size Tube N/A Tape Width N/A Quantity 50 units Electrical Characteristics   TC = 25°C unless otherwise noted.
    .
.
Max.
  ...


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