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FQP3P20

Fairchild Semiconductor
Part Number FQP3P20
Manufacturer Fairchild Semiconductor
Description 200V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP3P20 April 2000 QFET FQP3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field...
Datasheet PDF File FQP3P20 PDF File

FQP3P20
FQP3P20

Overview
FQP3P20 April 2000 QFET FQP3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters.
TM Features • • • • • • -2.
8A, -200V, RDS(on) = 2.
7Ω @VGS = -10 V Low gate charge ( typical 6.
0 nC) Low Crss ( typical 7.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !   G! G DS   TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP3P20 -200 -2.
8 -1...


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