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FQP4P25

Fairchild Semiconductor
Part Number FQP4P25
Manufacturer Fairchild Semiconductor
Description 250V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP4P25 December 2000 QFET FQP4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power fi...
Datasheet PDF File FQP4P25 PDF File

FQP4P25
FQP4P25

Overview
FQP4P25 December 2000 QFET FQP4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters.
TM Features • • • • • • -4.
0A, -250V, RDS(on) = 2.
1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.
3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! G ▶ ▲ ● DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP4P25 -250 -4.
0 -2.
53 -16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 280 -4.
0 7.
5 -5.
5 75 0.
6 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
5 -Max 1.
67 -62.
5 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQP4P25 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current G...


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