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FQP6P25

Fairchild Semiconductor
Part Number FQP6P25
Manufacturer Fairchild Semiconductor
Description 250V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP6P25 April 2000 QFET FQP6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field...
Datasheet PDF File FQP6P25 PDF File

FQP6P25
FQP6P25

Overview
FQP6P25 April 2000 QFET FQP6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters.
TM Features • • • • • • -6.
0A, -250V, RDS(on) = 1.
1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !   G! G   DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6P25 -250 -6.
0 -3.
...


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