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FQPF19N10

Fairchild Semiconductor
Part Number FQPF19N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF19N10 — N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.6 A, 100 mΩ Description Thi...
Datasheet PDF File FQPF19N10 PDF File

FQPF19N10
FQPF19N10

Overview
FQPF19N10 — N-Channel QFET® MOSFET October 2013 FQPF19N10 N-Channel QFET® MOSFET 100 V, 13.
6 A, 100 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features • 13.
6 A, 100 V, RDS(on)=100 mΩ(Max.
) @VGS=10 V, ID=6.
8 A • Low Gate Charge (Typ.
19 nC) • Low Crss (Typ.
32 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S FQPF19N10 100 13.
6 9.
6 54.
4 ± 25 220 13.
6 3.
8 6.
0 38 0.
25 -55 to +175 300 FQPF19N10 3.
95 62.
5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation 1 FQPF19N10 Rev.
C1 www.
fairchildsemi.
com FQPF19N10 — N-Channel QFET® MOSFET Package Marking and Ordering Information Device Marking FQPF19N10 Device FQPF19N10 Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter TC = 25°C unless othe...


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