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FQPF5N50C

Fairchild Semiconductor
Part Number FQPF5N50C
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode p...
Datasheet PDF File FQPF5N50C PDF File

FQPF5N50C
FQPF5N50C


Overview
FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM Features • • • • • • 5A, 500V, RDS(on) = 1.
4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP5N50C 500 5 2.
9 20 FQPF5N50C 5* 2.
9 * 20 * ± 30 300 5 7.
3 4.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 73 0.
58 -55 to +150 300 38 0.
3 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient FQP5N50C 1.
71 0.
5 62.
5 FQPF5N50C 3.
31 -62.
5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev.
A, April 2003 FQP5N50C/FQPF5N50C Electrical Characteristics Symbol Parameter TC = 2...


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