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FQPF70N10

Fairchild Semiconductor
Part Number FQPF70N10
Manufacturer Fairchild Semiconductor
Description 100V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF70N10 — N-Channel QFET® MOSFET FQPF70N10 N-Channel QFET® MOSFET 100 V, 35 A, 23 mΩ Description This N-Channel enhan...
Datasheet PDF File FQPF70N10 PDF File

FQPF70N10
FQPF70N10

Overview
FQPF70N10 — N-Channel QFET® MOSFET FQPF70N10 N-Channel QFET® MOSFET 100 V, 35 A, 23 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013 Features • 35 A, 100 V, RDS(on) = 23 mΩ (Max.
) @ VGS = 10 V, ID = 17.
5 A • Low Gate Charge (Typ.
85 nC) • Low Crss (Typ.
150 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) ...


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