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FQPF9N08

Fairchild Semiconductor
Part Number FQPF9N08
Manufacturer Fairchild Semiconductor
Description 80V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF9N08 December 2000 QFET FQPF9N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power f...
Datasheet PDF File FQPF9N08 PDF File

FQPF9N08
FQPF9N08

Overview
FQPF9N08 December 2000 QFET FQPF9N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
TM Features • • • • • • • 7.
0A, 80V, RDS(on) = 0.
21Ω @VGS = 10 V Low gate charge ( typical 5.
9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF9N08 80 7.
0 4.
95 28 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 55 7.
0 2.
3 6.
5 23 0.
15 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 6.
52 62.
5 Units °C/W °C/W ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQPF9N08 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Volta...


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