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FQS4410

Fairchild Semiconductor
Part Number FQS4410
Manufacturer Fairchild Semiconductor
Description Single N-Channel/ Logic Level/ Power MOSFET
Published Apr 1, 2005
Detailed Description FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancem...
Datasheet PDF File FQS4410 PDF File

FQS4410
FQS4410

Overview
FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
TM Features • • • • • • 10A, 30V, RDS(on) = 0.
0135Ω @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 145 pF) Fast switching Improved dv/dt capability 175°C maximum junction temperature rating 8 7 6 5 4 3 2 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQS4410 30 10 8 50 ± 20 7.
0 2.
5 0.
02 -55 to +175 Units V A A A V V/ns W W/°C °C Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Linear Derating Factor Operating and Storage Temperature Range (Note 3) Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 50 Units °C/W ©2000 Fairchild Semiconductor International Rev.
A, May 2000 FQS4410 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Unit s Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 30 V, VGS = 0 V VDS = 24 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 ------0.
03 ------1 10...


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