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FQU1N50B

Fairchild Semiconductor
Part Number FQU1N50B
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File FQU1N50B PDF File

FQU1N50B
FQU1N50B

Overview
FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
TM Features • • • • • • 1.
1A, 500V, RDS(on) = 9.
0Ω @VGS = 10 V Low gate charge ( typical 4.
0 nC) Low Crss ( typical 3.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD1N50 / FQU1N50 500 1.
1 0.
7 4.
4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 80 1.
1 2.
5 4.
5 2.
5 25 0.
2 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 5.
0 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A, May 2000 FQD1N50B / FQU1N50B Electrical Characteristics Symbol Parameter TC = 25...


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