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FQU2P40

Fairchild Semiconductor
Part Number FQU2P40
Manufacturer Fairchild Semiconductor
Description 400V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD2P40 / FQU2P40 December 2000 QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description These P-Channel enhan...
Datasheet PDF File FQU2P40 PDF File

FQU2P40
FQU2P40

Overview
FQD2P40 / FQU2P40 December 2000 QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM Features • • • • • • -1.
56A, -400V, RDS(on) = 6.
5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD2P40 / FQU2P40 -400 -1.
56 -0.
98 -6.
24 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 120 -1.
56 3.
8 -4.
5 2.
5 38 0.
3 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.
29 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A2, December 2000 FQD2P40 / FQU2P40 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise note...


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