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FQU4N20L

Fairchild Semiconductor
Part Number FQU4N20L
Manufacturer Fairchild Semiconductor
Description 200V LOGIC N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD4N20L / FQU4N20L December 2000 QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description These N-Cha...
Datasheet PDF File FQU4N20L PDF File

FQU4N20L
FQU4N20L

Overview
FQD4N20L / FQU4N20L December 2000 QFET FQD4N20L / FQU4N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
TM Features • • • • • • • 3.
2A, 200V, RDS(on) = 1.
35Ω @VGS = 10 V Low gate charge ( typical 4.
0 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD4N20L / FQU4N20L 200 3.
2 2.
02 12.
8 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 52 3.
2 3.
0 5.
5 2.
5 30 0.
24 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 4.
17 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev.
A2, December 20...


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