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FQU8P10

Fairchild Semiconductor
Part Number FQU8P10
Manufacturer Fairchild Semiconductor
Description 100V P-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD8P10 / FQU8P10 QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode pow...
Datasheet PDF File FQU8P10 PDF File

FQU8P10
FQU8P10

Overview
FQD8P10 / FQU8P10 QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM Features • • • • • • -6.
6A, -100V, RDS(on) = 0.
53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD8P10 / FQU8P10 -100 -6.
6 -4.
2 -26.
4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 150 -6.
6 4.
4 -6.
0 2.
5 44 0.
35 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.
84 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Fairchild Semiconductor Corporation Rev.
B, August 2002 FQD8P10 / FQU8P10 Electrical Characteristics Symbol Parameter TC = 25°C unless ot...


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