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DM-231

Sony Corporation
Part Number DM-231
Manufacturer Sony Corporation
Description Magnetoresistance Element
Published Apr 1, 2005
Detailed Description DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-2...
Datasheet PDF File DM-231 PDF File

DM-231
DM-231

Overview
DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office.
Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.
It is suitable for angle of rotation detection.
Features • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.
) at VCC=5 V, H=14400 A/m • Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride protective film.
Structure Ferromagnetic thin film circuit (With ferrite magnet) Applications • Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VCC 10 • Storage temperature Tstg –30 to +100 M-118 (Plastic) V °C Recommended Operating Conditions • Supply voltage VCC 5 • Operating temperature Topr –20 to + 75 Electrical Characteristics Item Output voltage Midpoint potential Midpoint p...


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