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BA220

NXP
Part Number BA220
Manufacturer NXP
Description High-speed diode
Published Apr 1, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA220 High-speed diode Product specification Supersedes data of April 1996 F...
Datasheet PDF File BA220 PDF File

BA220
BA220

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA220 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max.
4 ns • General application • Continuous reverse voltage: max.
10 V • Repetitive peak reverse voltage: max.
10 V • Repetitive peak forward current: max.
400 mA.
The diode is type branded.
handbook, halfpage k BA220 DESCRIPTION The BA220 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a MAM246 APPLICATIONS • High-speed switching.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1 350 +200 200 A A A mW °C °C see Fig.
2; note 1 CONDITIONS MIN.
− − − − MAX.
10 10 200 400 V V mA mA UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER forward voltage see Fig.
3 IF = 0.
1 mA IF = 1 mA IF = 5 mA IF = 10 mA IF = 100 mA IR reverse current see Fig.
5 VR = 10 V VR = 10 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.
6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 when switched from IF = 400 mA; tr = 30 ns; see Fig.
8 − − − − 1...


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