DatasheetsPDF.com

42S32200

ETC
Part Number 42S32200
Manufacturer ETC
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Published Apr 1, 2005
Detailed Description IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fu...
Datasheet PDF File 42S32200 PDF File

42S32200
42S32200


Overview
IS42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.
3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • Self refresh modes • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge command • Industrial temperature availability • Package 400-mil 86-pin TSOP II ISSI PIN CONFIGURATION (86-Pin TSOP (Type II) ® PRELIMINARY INFORMATION August 2003 OVERVIEW ISSI's 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance.
The synchronous DRAMs achieve high-speed data transfer using pipeline a...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)