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4AC12

Hitachi Semiconductor
Part Number 4AC12
Manufacturer Hitachi Semiconductor
Description Silicon NPN Epitaxial
Published Apr 1, 2005
Detailed Description 4AC12 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2...
Datasheet PDF File 4AC12 PDF File

4AC12
4AC12

Overview
4AC12 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 1 1 7 10 6 4AC12 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC * 1 1 Ratings 27 27 7 2 4 2 4 28 150 –55 to +150 Unit V V V A A A W °C °C PC * (TC = 25°C) Junction temperature Storage temperature Note: 1.
4 devices operation.
Tj Tstg Electrical Characteristics (for each device, Ta = 25°C) Item Symbol Min 27 28...


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