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HY29LV800T-90

Hynix Semiconductor
Part Number HY29LV800T-90
Manufacturer Hynix Semiconductor
Description 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
Published Apr 2, 2005
Detailed Description HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, progr...
Datasheet PDF File HY29LV800T-90 PDF File

HY29LV800T-90
HY29LV800T-90

Overview
HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.
7 to 3.
6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for operation from 3.
0 to 3.
6 volts Ultra-low Power Consumption (Typical Values) – Automatic sleep mode current: 0.
2 µA – Standby mode current: 0.
2 µA – Read current: 7 mA (at 5 Mhz) – Program/erase current: 15 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 KB and fifteen 64 KB sectors in byte mode – One 8 KW, two 4 KW, one 16 KW and fifteen 32 KW sectors in word mode – Top or bottom boot block configurations available Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Sectors lockable in-system or via programming equipment – Temporary Sector Unprotect allows changes in locked sectors (req...


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